Parametric results for: ISL9N312AD3 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

8 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 8

8 hits Apply

DS Breakdown Voltage-Min (1)

30 V 8

8 hits Apply

Drain Current-Max (ID) (1)

50 A 8

8 hits Apply

Drain-source On Resistance-Max (1)

12 mΩ 8

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

TO-251AA 4 TO-252AA 4

8 hits Apply

R-PSIP-T3 4 R-PSSO-G2 4

8 hits Apply

e3 5

8 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 4 Rochester Electronics LLC 4

8 hits Apply

1 2 NOT SPECIFIED 3

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (2)

2 4 3 4

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

175.0 °C 2

8 hits Apply

PLASTIC/EPOXY 8

8 hits Apply

RECTANGULAR 8

8 hits Apply

IN-LINE 4 SMALL OUTLINE 4

8 hits Apply

Active 4 Obsolete 4

8 hits Apply

Yes 4

8 hits Apply

260 1 NOT SPECIFIED 3

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

75 W 2

8 hits Apply

Surface Mount (2)

NO 4 YES 4

8 hits Apply