Parametric results for: ISL73096EHVF under RF Power Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount Transition Frequency-Nom (fT)

LOW NOISE 1

2 hits Apply

Collector Current-Max (IC) (1)

11.3 mA 1

2 hits Apply

Collector-Emitter Voltage-Max (1)

8 V 1

2 hits Apply

Configuration (1)

SEPARATE, 5 ELEMENTS 1

2 hits Apply

DC Current Gain-Min (hFE) (1)

40.0 1

2 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

2 hits Apply

R-CDFP-F16 1

2 hits Apply

e4 2

2 hits Apply

Manufacturer (2)

Intersil Corporation 1 Renesas Electronics Corporation 1

2 hits Apply

Number of Elements (1)

5 1

2 hits Apply

Number of Terminals (1)

16 1

2 hits Apply

125.0 °C 1

2 hits Apply

-55.0 °C 1

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

FLATPACK 1

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Yes 1

2 hits Apply

260 2

2 hits Apply

Polarity/Channel Type (1)

NPN AND PNP 1

2 hits Apply

1.25 W 1

2 hits Apply

Surface Mount (1)

YES 1

2 hits Apply

Transition Frequency-Nom (fT) (1)

8 GHz 1

2 hits Apply