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IS61QDB41M18A-250M3L
Integrated Silicon Solution Inc
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$36.3565 | Yes | Yes | Active | 18.8744 Mbit | 18 | 1MX18 | 1.8 V | 450 ps | 250 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 270 mA | 1.7 V | 650 µA | 1.89 V | 1.71 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 70 °C | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 17 mm | 15 mm | INTEGRATED SILICON SOLUTION INC | BGA | LBGA, BGA165,11X15,40 | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||
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IS61QDB41M18A-400M3I
Integrated Silicon Solution Inc
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Check for Price | No | Active | 18.8744 Mbit | 18 | 1MX18 | 1.8 V | 450 ps | 400 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 320 mA | 1.7 V | 950 µA | 1.89 V | 1.71 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 17 mm | 15 mm | INTEGRATED SILICON SOLUTION INC | BGA | LBGA, BGA165,11X15,40 | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||
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IS61QDB41M18A-400M3LI
Integrated Silicon Solution Inc
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Check for Price | Yes | Active | 18.8744 Mbit | 18 | 1MX18 | 1.8 V | 450 ps | 400 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 320 mA | 1.7 V | 950 µA | 1.89 V | 1.71 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 17 mm | 15 mm | INTEGRATED SILICON SOLUTION INC | BGA | LBGA, BGA165,11X15,40 | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||
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IS61QDB41M18A-300B3I
Integrated Silicon Solution Inc
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Check for Price | No | Obsolete | 18.8744 Mbit | 18 | 1MX18 | 1.8 V | 450 ps | 300 MHz | QDR SRAM | SEPARATE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 280 mA | 1.7 V | 700 µA | 1.89 V | 1.71 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | TBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 15 mm | 13 mm | INTEGRATED SILICON SOLUTION INC | 13 X 15 MM, 1.20 MM HEIGHT, TFBGA-165 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||||||||
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IS61QDB41M18A-333B3LI
Integrated Silicon Solution Inc
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Check for Price | Yes | Obsolete | 18.8744 Mbit | 18 | 1MX18 | 1.8 V | 450 ps | 333 MHz | QDR SRAM | SEPARATE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 290 mA | 1.7 V | 750 µA | 1.89 V | 1.71 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | TBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 15 mm | 13 mm | INTEGRATED SILICON SOLUTION INC | TBGA, BGA165,11X15,40 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||||||||
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IS61QDB41M18A-250M3
Integrated Silicon Solution Inc
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Check for Price | No | No | Active | 18.8744 Mbit | 18 | 1MX18 | 1.8 V | 450 ps | 250 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 270 mA | 1.7 V | 650 µA | 1.89 V | 1.71 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 17 mm | 15 mm | INTEGRATED SILICON SOLUTION INC | BGA | LBGA, BGA165,11X15,40 | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||
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IS61QDB41M18A-400M3L
Integrated Silicon Solution Inc
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Check for Price | Yes | Active | 18.8744 Mbit | 18 | 1MX18 | 1.8 V | 450 ps | 400 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 320 mA | 1.7 V | 950 µA | 1.89 V | 1.71 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | 70 °C | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 17 mm | 15 mm | INTEGRATED SILICON SOLUTION INC | BGA | LBGA, BGA165,11X15,40 | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||||||
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IS61QDB41M18A-400B3
Integrated Silicon Solution Inc
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Check for Price | No | Obsolete | 18.8744 Mbit | 18 | 1MX18 | 1.8 V | 450 ps | 400 MHz | QDR SRAM | SEPARATE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 320 mA | 1.7 V | 950 µA | 1.89 V | 1.71 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | 70 °C | 165 | PLASTIC/EPOXY | TBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 15 mm | 13 mm | INTEGRATED SILICON SOLUTION INC | 13 X 15 MM, 1.20 MM HEIGHT, TFBGA-165 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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IS61QDB41M18A-300B4LI
Integrated Silicon Solution Inc
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Check for Price | Yes | Active | 18.8744 Mbit | 18 | 1MX18 | 1.8 V | 450 ps | 300 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 280 mA | 1.7 V | 700 µA | 1.89 V | 1.71 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | INTEGRATED SILICON SOLUTION INC | BGA | LBGA, BGA165,11X15,40 | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||
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IS61QDB41M18A-300B3
Integrated Silicon Solution Inc
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Check for Price | No | Obsolete | 18.8744 Mbit | 18 | 1MX18 | 1.8 V | 450 ps | 300 MHz | QDR SRAM | SEPARATE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 280 mA | 1.7 V | 700 µA | 1.89 V | 1.71 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | 70 °C | 165 | PLASTIC/EPOXY | TBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 15 mm | 13 mm | INTEGRATED SILICON SOLUTION INC | 13 X 15 MM, 1.20 MM HEIGHT, TFBGA-165 | compliant | 3A991.B.2.A | 8542.32.00.41 |