Filter Your Search
1 - 3 of 3 results
|
IRLW640A
Samsung Semiconductor
|
Check for Price | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 180 mΩ | 64 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 W | 63 A | SILICON | R-PSSO-G2 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | SAMSUNG SEMICONDUCTOR INC | SMALL OUTLINE, R-PSSO-G2 | 3 | unknown | EAR99 | ||||||||
|
IRLW640A
Fairchild Semiconductor Corporation
|
Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 180 mΩ | 64 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 W | 63 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | SMALL OUTLINE, R-PSSO-G2 | 3 | unknown | EAR99 | D2PAK | ||
|
IRLW640ATM
Fairchild Semiconductor Corporation
|
Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 180 mΩ | 64 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 W | 63 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | SMALL OUTLINE, R-PSSO-G2 | 3 | unknown | EAR99 | D2PAK |