Parametric results for: IRLU4343-701 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 14

14 hits Apply

160.0 mJ 14

14 hits Apply

DRAIN 14

14 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 14

14 hits Apply

DS Breakdown Voltage-Min (1)

55 V 14

14 hits Apply

Drain Current-Max (ID) (1)

26 A 14

14 hits Apply

Drain-source On Resistance-Max (1)

50 mΩ 14

14 hits Apply

METAL-OXIDE SEMICONDUCTOR 14

14 hits Apply

R-PSSO-G3 14

14 hits Apply

e0 4 e3 7

14 hits Apply

Manufacturer (2)

Infineon Technologies AG 6 International Rectifier 8

14 hits Apply

1 7

14 hits Apply

Number of Elements (1)

1 14

14 hits Apply

Number of Terminals (1)

3 14

14 hits Apply

ENHANCEMENT MODE 14

14 hits Apply

175.0 °C 10

14 hits Apply

PLASTIC/EPOXY 14

14 hits Apply

RECTANGULAR 14

14 hits Apply

SMALL OUTLINE 14

14 hits Apply

Active 6 Obsolete 4 Transferred 4

14 hits Apply

No 3 Yes 4

14 hits Apply

260 1 NOT SPECIFIED 3

14 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 14

14 hits Apply

79 W 1

14 hits Apply

Surface Mount (1)

YES 14

14 hits Apply