Filter Your Search
1 - 5 of 5 results
|
IRLR220ATF
Fairchild Semiconductor Corporation
|
Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 4.6 A | 800 mΩ | 28 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 33 W | 16 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-252 | DPAK-3 | 3 | not_compliant | EAR99 | |||||
|
IRLR220ATF
Rochester Electronics LLC
|
Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 4.6 A | 800 mΩ | 28 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 16 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | COMMERCIAL | 1 | 260 | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | ROCHESTER ELECTRONICS LLC | TO-252 | DPAK-3 | 3 | unknown | |||||
|
IRLR220A
Fairchild Semiconductor Corporation
|
Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 4.6 A | 800 mΩ | 28 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 33 W | 16 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-252 | SMALL OUTLINE, R-PSSO-G2 | 3 | unknown | EAR99 | ||||||
|
IRLR220A
Samsung Semiconductor
|
Check for Price | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 4.6 A | 800 mΩ | 28 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 16 A | SWITCHING | SILICON | R-PSSO-G2 | Not Qualified | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | SAMSUNG SEMICONDUCTOR INC | SMALL OUTLINE, R-PSSO-G2 | unknown | EAR99 | ||||||||||||||
|
IRLR220ATM
Fairchild Semiconductor Corporation
|
Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 4.6 A | 800 mΩ | 28 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 33 W | 16 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-252 | DPAK-3 | 3 | not_compliant | EAR99 |