Parametric results for: IRLMS5703TR under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 2 ULTRA LOW RESISTANCE 1

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

30 V 3

3 hits Apply

Drain Current-Max (ID) (2)

2.3 A 2 2.4 A 1

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (2)

180 mΩ 1 200 mΩ 2

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PDSO-G6 3

3 hits Apply

e3 3

3 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 1

3 hits Apply

1 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

6 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 1

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Active 1 Obsolete 1 Transferred 1

3 hits Apply

Yes 1

3 hits Apply

260 2

3 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 3

3 hits Apply

780 mW 1

3 hits Apply

1.7 W 1

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply