Parametric results for: IRLMS1503 under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 7 HIGH RELIABILITY, ULTRA-LOW RESISTANCE 1 ULTRA LOW RESISTANCE 1

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 9

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DS Breakdown Voltage-Min (1)

30 V 9

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Drain Current-Max (ID) (1)

3.2 A 9

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Drain-source On Resistance-Max (1)

100 mΩ 9

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METAL-OXIDE SEMICONDUCTOR 9

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R-PDSO-G6 9

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e0 3 e3 5

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Manufacturer (2)

Infineon Technologies AG 5 International Rectifier 6

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1 7

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Number of Elements (1)

1 9

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Number of Terminals (1)

6 9

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ENHANCEMENT MODE 9

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150.0 °C 4

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PLASTIC/EPOXY 9

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RECTANGULAR 9

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SMALL OUTLINE 9

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Active 4 Obsolete 2 Transferred 5

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No 3 Yes 2

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260 4 NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 9

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780 mW 1

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780 mW 3 1.7 W 1

Min (W) - Max (W)

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Surface Mount (1)

YES 9

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