Parametric results for: IRLML0030 under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 1

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 3

4 hits Apply

Drain Current-Max (ID) (1)

5.3 A 3

4 hits Apply

Drain-source On Resistance-Max (1)

27 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

39 pF 2

4 hits Apply

TO-236AB 3

4 hits Apply

R-PDSO-G3 3

4 hits Apply

e3 3

4 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 2

4 hits Apply

1 3

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

3 3

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 3

4 hits Apply

-55.0 °C 2

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

SMALL OUTLINE 3

4 hits Apply

Active 1 Obsolete 1 Transferred 2

4 hits Apply

Yes 1

4 hits Apply

260 3

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

1.3 W 2

4 hits Apply

1.3 W 3

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply