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IRHMS54160PBF
International Rectifier
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IRHMS54160PBF
Infineon Technologies AG
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IRHMS54160
Infineon Technologies AG
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IRHMS54160
International Rectifier
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| Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||
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Composite Price
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Pbfree Code
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Rohs Code
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Part Life Cycle Code
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Polarity/Channel Type |
Surface Mount
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Configuration |
Number of Terminals
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DS Breakdown Voltage-Min
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Number of Elements |
Drain Current-Max (ID)
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Drain-source On Resistance-Max
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Additional Feature
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Avalanche Energy Rating (Eas)
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FET Technology |
Operating Mode
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Power Dissipation-Max (Abs)
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Pulsed Drain Current-Max (IDM)
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Transistor Application
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Transistor Element Material
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JEDEC-95 Code
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JESD-30 Code
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JESD-609 Code
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Qualification Status
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Operating Temperature-Max
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Peak Reflow Temperature (Cel)
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Time@Peak Reflow Temperature-Max (s)
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Case Connection
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Package Body Material
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Package Shape
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Package Style
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Terminal Finish
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Terminal Form
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Terminal Position
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Ihs Manufacturer
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Part Package Code
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Package Description
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Pin Count
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Reach Compliance Code
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ECCN Code
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| Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 45 A | 13 mΩ | RADIATION HARDENED | 493 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 180 A | SWITCHING | SILICON | TO-254AA | S-CSFM-P3 | Not Qualified | 150 °C | 260 | 40 | ISOLATED | CERAMIC, METAL-SEALED COFIRED | SQUARE | FLANGE MOUNT | PIN/PEG | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-254AA | HERMETIC SEALED, CERAMIC PACKAGE-3 | 3 | compliant | EAR99 | ||||
| Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 45 A | 13 mΩ | RADIATION HARDENED | 493 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 180 A | SWITCHING | SILICON | TO-254AA | S-CSFM-P3 | Not Qualified | 260 | 40 | ISOLATED | CERAMIC, METAL-SEALED COFIRED | SQUARE | FLANGE MOUNT | PIN/PEG | SINGLE | INFINEON TECHNOLOGIES AG | HERMETIC SEALED, CERAMIC PACKAGE-3 | compliant | EAR99 | ||||||||
| No | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 45 A | 13 mΩ | RADIATION HARDENED | 493 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 208 W | 180 A | SWITCHING | SILICON | TO-254AA | S-CSFM-P3 | e0 | Not Qualified | 150 °C | ISOLATED | CERAMIC, METAL-SEALED COFIRED | SQUARE | FLANGE MOUNT | TIN LEAD | PIN/PEG | SINGLE | INFINEON TECHNOLOGIES AG | HERMETIC SEALED, CERAMIC PACKAGE-3 | unknown | EAR99 | ||||||
| No | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 45 A | 13 mΩ | RADIATION HARDENED | 493 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 208 W | 180 A | SWITCHING | SILICON | TO-254AA | S-CSFM-P3 | e0 | Not Qualified | 150 °C | ISOLATED | CERAMIC, METAL-SEALED COFIRED | SQUARE | FLANGE MOUNT | TIN LEAD | PIN/PEG | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-254AA | HERMETIC SEALED, CERAMIC PACKAGE-3 | 3 | compliant | EAR99 |
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IRHMS54160PBF
International Rectifier
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Check for Price Buy | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 45 A | 13 mΩ | RADIATION HARDENED | 493 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 180 A | SWITCHING | SILICON | TO-254AA | S-CSFM-P3 | Not Qualified | 150 °C | 260 | 40 | ISOLATED | CERAMIC, METAL-SEALED COFIRED | SQUARE | FLANGE MOUNT | PIN/PEG | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-254AA | HERMETIC SEALED, CERAMIC PACKAGE-3 | 3 | compliant | EAR99 | |||||
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IRHMS54160PBF
Infineon Technologies AG
|
Check for Price Buy | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 45 A | 13 mΩ | RADIATION HARDENED | 493 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 180 A | SWITCHING | SILICON | TO-254AA | S-CSFM-P3 | Not Qualified | 260 | 40 | ISOLATED | CERAMIC, METAL-SEALED COFIRED | SQUARE | FLANGE MOUNT | PIN/PEG | SINGLE | INFINEON TECHNOLOGIES AG | HERMETIC SEALED, CERAMIC PACKAGE-3 | compliant | EAR99 | |||||||||
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IRHMS54160
Infineon Technologies AG
|
Check for Price Buy | No | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 45 A | 13 mΩ | RADIATION HARDENED | 493 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 208 W | 180 A | SWITCHING | SILICON | TO-254AA | S-CSFM-P3 | e0 | Not Qualified | 150 °C | ISOLATED | CERAMIC, METAL-SEALED COFIRED | SQUARE | FLANGE MOUNT | TIN LEAD | PIN/PEG | SINGLE | INFINEON TECHNOLOGIES AG | HERMETIC SEALED, CERAMIC PACKAGE-3 | unknown | EAR99 | |||||||
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IRHMS54160
International Rectifier
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Check for Price Buy | No | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 45 A | 13 mΩ | RADIATION HARDENED | 493 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 208 W | 180 A | SWITCHING | SILICON | TO-254AA | S-CSFM-P3 | e0 | Not Qualified | 150 °C | ISOLATED | CERAMIC, METAL-SEALED COFIRED | SQUARE | FLANGE MOUNT | TIN LEAD | PIN/PEG | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-254AA | HERMETIC SEALED, CERAMIC PACKAGE-3 | 3 | compliant | EAR99 |