Parametric results for: IRHM8230UPBF under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

RADIATION HARDENED 1

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330.0 mJ 1

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ISOLATED 1

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

200 V 1

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Drain Current-Max (ID) (1)

9 A 1

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Drain-source On Resistance-Max (1)

490 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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TO-254AA 1

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S-MSFM-P3 1

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Manufacturer (1)

International Rectifier 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

3 1

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ENHANCEMENT MODE 1

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150.0 °C 1

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METAL 1

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SQUARE 1

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FLANGE MOUNT 1

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Obsolete 1

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Yes 1

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260 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

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75 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply