Parametric results for: IRHF57Z30 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 4

6 hits Apply

520.0 mJ 6

6 hits Apply

ISOLATED 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

30 V 6

6 hits Apply

Drain Current-Max (ID) (1)

12 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

45 mΩ 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-205AF 6

6 hits Apply

O-MBCY-W3 6

6 hits Apply

e0 2

6 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 4

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 5

6 hits Apply

METAL 6

6 hits Apply

ROUND 6

6 hits Apply

CYLINDRICAL 6

6 hits Apply

Active 2 Obsolete 2 Transferred 2

6 hits Apply

No 1 Yes 2

6 hits Apply

260 2 NOT SPECIFIED 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

25 W 2

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply