Parametric results for: IRHF3230 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

240.0 mJ 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

200 V 1

1 hit Apply

Drain Current-Max (ID) (1)

5.5 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

360 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

TO-39 1

1 hit Apply

O-MBCY-W3 1

1 hit Apply

e0 1

1 hit Apply

Manufacturer (1)

Infineon Technologies AG 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

3 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

150.0 °C 1

1 hit Apply

METAL 1

1 hit Apply

ROUND 1

1 hit Apply

CYLINDRICAL 1

1 hit Apply

Active 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

25 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply