Parametric results for: IRFZ44NS under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, HIGH RELIABILITY 15 ESD PROTECTED 2

19 hits Apply

110.0 mJ 2 150.0 mJ 16

Min (mJ) - Max (mJ)

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DRAIN 18

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Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 18

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DS Breakdown Voltage-Min (1)

55 V 18

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Drain Current-Max (ID) (1)

49 A 19

19 hits Apply

Drain-source On Resistance-Max (2)

17.5 mΩ 16 22 mΩ 2

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 19

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TO-263AB 11

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R-PSSO-G2 18

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e0 3 e3 12

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Manufacturer (5)

Infineon Technologies AG 6 International Rectifier 9 NXP Semiconductors 2 Philips Semiconductors 1 Transys Electronics Limited 1

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1 14

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Number of Elements (1)

1 19

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Number of Terminals (1)

2 18

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ENHANCEMENT MODE 19

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175.0 °C 14

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-55.0 °C 1

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PLASTIC/EPOXY 18

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RECTANGULAR 18

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SMALL OUTLINE 18

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Active 1 Contact Manufacturer 1 Obsolete 8 Transferred 9

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No 1 Yes 6

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260 6 NOT SPECIFIED 2

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Polarity/Channel Type (1)

N-CHANNEL 19

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94 W 12 110 W 2

Min (W) - Max (W)

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Surface Mount (1)

YES 19

19 hits Apply