Findchips: Parametric Search Results for IRFU5305


Select Parts		Part Number

		IRFU5305PBF Infineon Technologies AG
		IRFU5305PBF International Rectifier
		AUIRFU5305 Infineon Technologies AG
		IRFU5305 International Rectifier
		AUIRFU5305 International Rectifier
		IRFU5305 Infineon Technologies AG

				Most Relevant								Technical								Compliance					Operating Conditions					Physical							Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Additional Feature	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Qualification Status	Reference Standard	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Reach Compliance Code	ECCN Code	Samacsys Manufacturer	Part Package Code	Package Description	Pin Count

$0.6775

Yes

Active

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

31 A

65 mΩ

AVALANCHE RATED, HIGH RELIABILITY

280 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

69 W

110 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

175 °C

-55 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Matte Tin (Sn) - with Nickel (Ni) barrier

THROUGH-HOLE

SINGLE

INFINEON TECHNOLOGIES AG

not_compliant

EAR99

Infineon

Check for Price

Yes

Transferred

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

31 A

65 mΩ

AVALANCHE RATED, HIGH RELIABILITY

280 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

69 W

110 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Matte Tin (Sn) - with Nickel (Ni) barrier

THROUGH-HOLE

SINGLE

INTERNATIONAL RECTIFIER CORP

not_compliant

EAR99

TO-251AA

LEAD FREE, PLASTIC, IPAK-3

Check for Price

Yes

Active

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

31 A

65 mΩ

AVALANCHE RATED

280 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

110 W

110 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

AEC-Q101

175 °C

NOT SPECIFIED

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

THROUGH-HOLE

SINGLE

INFINEON TECHNOLOGIES AG

compliant

EAR99

ROHS COMPLIANT, PLASTIC, IPAK-3

Check for Price

Transferred

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

31 A

65 mΩ

HIGH RELIABILITY

280 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

69 W

110 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

SINGLE

INTERNATIONAL RECTIFIER CORP

compliant

EAR99

TO-251AA

IPAK-3

Check for Price

Yes

Transferred

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

31 A

65 mΩ

AVALANCHE RATED, HIGH RELIABILITY

280 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

110 W

110 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

INTERNATIONAL RECTIFIER CORP

compliant

EAR99

TO-251AA

IN-LINE, R-PSIP-T3

Check for Price

Active

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

31 A

65 mΩ

HIGH RELIABILITY

280 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

110 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

175 °C

NOT SPECIFIED

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Tin/Lead (Sn/Pb)

THROUGH-HOLE

SINGLE

INFINEON TECHNOLOGIES AG

compliant

EAR99

Infineon

IPAK-3

Compare

IRFU5305PBF

Infineon Technologies AG

$0.6775

Yes

Active

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

31 A

65 mΩ

AVALANCHE RATED, HIGH RELIABILITY

280 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

69 W

110 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

175 °C

-55 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Matte Tin (Sn) - with Nickel (Ni) barrier

THROUGH-HOLE

SINGLE

INFINEON TECHNOLOGIES AG

not_compliant

EAR99

Infineon

IRFU5305PBF

International Rectifier

Check for Price

Yes

Transferred

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

31 A

65 mΩ

AVALANCHE RATED, HIGH RELIABILITY

280 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

69 W

110 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Matte Tin (Sn) - with Nickel (Ni) barrier

THROUGH-HOLE

SINGLE

INTERNATIONAL RECTIFIER CORP

not_compliant

EAR99

TO-251AA

LEAD FREE, PLASTIC, IPAK-3

AUIRFU5305

Infineon Technologies AG

Check for Price

Yes

Active

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

31 A

65 mΩ

AVALANCHE RATED

280 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

110 W

110 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

AEC-Q101

175 °C

NOT SPECIFIED

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

THROUGH-HOLE

SINGLE

INFINEON TECHNOLOGIES AG

compliant

EAR99

ROHS COMPLIANT, PLASTIC, IPAK-3

IRFU5305

International Rectifier

Check for Price

Transferred

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

31 A

65 mΩ

HIGH RELIABILITY

280 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

69 W

110 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

SINGLE

INTERNATIONAL RECTIFIER CORP

compliant

EAR99

TO-251AA

IPAK-3

AUIRFU5305

International Rectifier

Check for Price

Yes

Transferred

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

31 A

65 mΩ

AVALANCHE RATED, HIGH RELIABILITY

280 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

110 W

110 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

INTERNATIONAL RECTIFIER CORP

compliant

EAR99

TO-251AA

IN-LINE, R-PSIP-T3

IRFU5305

Infineon Technologies AG

Check for Price

Active

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

31 A

65 mΩ

HIGH RELIABILITY

280 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

110 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

175 °C

NOT SPECIFIED

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Tin/Lead (Sn/Pb)

THROUGH-HOLE

SINGLE

INFINEON TECHNOLOGIES AG

compliant

EAR99

Infineon

IPAK-3

Parametric results for: IRFU5305 under Power Field-Effect Transistors