Parametric results for: IRFU214 under Power Field-Effect Transistors

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Manufacturer Part Number: irfu214
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IRFU214PBF
Vishay Intertechnologies
IRFU214PBF
International Rectifier
IRFU214
Intersil Corporation
IRFU214PBF
Vishay Siliconix
IRFU214
Fairchild Semiconductor Corporation
IRFU214B
Fairchild Semiconductor Corporation
IRFU214
Samsung Semiconductor
IRFU214BTU
Fairchild Semiconductor Corporation
IRFU214ATU
Fairchild Semiconductor Corporation
IRFU214A
Samsung Semiconductor
Most Relevant Technical Compliance Operating Conditions Physical Other
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Pbfree Code
Rohs Code
Part Life Cycle Code
Polarity/Channel Type Surface Mount
Configuration Number of Terminals
DS Breakdown Voltage-Min
Number of Elements Drain Current-Max (ID)
Drain-source On Resistance-Max
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Avalanche Energy Rating (Eas)
FET Technology Operating Mode
Power Dissipation-Max (Abs)
Pulsed Drain Current-Max (IDM)
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Transistor Element Material
JEDEC-95 Code
JESD-30 Code
JESD-609 Code
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Time@Peak Reflow Temperature-Max (s)
Case Connection
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Package Shape
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Terminal Finish
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Ihs Manufacturer
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Samacsys Manufacturer
Part Package Code
Package Description
Pin Count
Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 250 V 1 2.2 A 2 Ω 190 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 8.8 A SWITCHING SILICON TO-251AA R-PSIP-T3 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE Matte Tin (Sn) - annealed THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC not_compliant EAR99 Vishay
Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 250 V 1 2.2 A 2 Ω AVALANCHE RATED 190 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 8.8 A SWITCHING SILICON TO-251AA R-PSIP-T3 e3 Not Qualified 1 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN OVER NICKEL THROUGH-HOLE SINGLE INTERNATIONAL RECTIFIER CORP compliant EAR99 TO-251AA LEAD FREE, PLASTIC, IPAK-3 3
No Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 250 V 1 2.2 A 2 Ω 61 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 8.8 A SWITCHING SILICON TO-251AA R-PSIP-T3 e0 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE Tin/Lead (Sn/Pb) THROUGH-HOLE SINGLE INTERSIL CORP not_compliant EAR99
Yes Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 250 V 1 2.2 A 2 Ω AVALANCHE RATED 190 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 8.8 A SWITCHING SILICON TO-251AA R-PSIP-T3 Not Qualified 150 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE VISHAY SILICONIX unknown EAR99 TO-251AA ROHS COMPLIANT, PLASTIC, IPAK-3 3
No Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 250 V 1 2.2 A 2 Ω 61 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 8.8 A SWITCHING SILICON TO-251AA R-PSIP-T3 e0 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE TIN LEAD THROUGH-HOLE SINGLE FAIRCHILD SEMICONDUCTOR CORP unknown EAR99
No No Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 250 V 1 2.2 A 2 Ω 45 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 8.5 A SWITCHING SILICON R-PSIP-T3 e0 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR IN-LINE TIN LEAD THROUGH-HOLE SINGLE FAIRCHILD SEMICONDUCTOR CORP compliant EAR99 IN-LINE, R-PSIP-T3 3
Obsolete N-CHANNEL NO SINGLE 3 250 V 1 2.2 A 2 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W SILICON R-PSIP-T3 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE SAMSUNG SEMICONDUCTOR INC unknown EAR99 IN-LINE, R-PSIP-T3 3
No Obsolete N-CHANNEL NO SINGLE 1 2.2 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W e0 150 °C Tin/Lead (Sn/Pb) FAIRCHILD SEMICONDUCTOR CORP compliant EAR99
No Obsolete N-CHANNEL NO SINGLE 1 2.2 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W e0 150 °C Tin/Lead (Sn/Pb) FAIRCHILD SEMICONDUCTOR CORP unknown EAR99 ,
Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 250 V 1 2.2 A 2 Ω 61 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 8.5 A SILICON R-PSIP-T3 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE SAMSUNG SEMICONDUCTOR INC unknown EAR99 IN-LINE, R-PSIP-T3 3
Compare
IRFU214PBF
Vishay Intertechnologies
$0.3858 Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 250 V 1 2.2 A 2 Ω 190 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 8.8 A SWITCHING SILICON TO-251AA R-PSIP-T3 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE Matte Tin (Sn) - annealed THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC not_compliant EAR99 Vishay
IRFU214PBF
International Rectifier
Check for Price Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 250 V 1 2.2 A 2 Ω AVALANCHE RATED 190 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 8.8 A SWITCHING SILICON TO-251AA R-PSIP-T3 e3 Not Qualified 1 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN OVER NICKEL THROUGH-HOLE SINGLE INTERNATIONAL RECTIFIER CORP compliant EAR99 TO-251AA LEAD FREE, PLASTIC, IPAK-3 3
IRFU214
Intersil Corporation
Check for Price No Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 250 V 1 2.2 A 2 Ω 61 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 8.8 A SWITCHING SILICON TO-251AA R-PSIP-T3 e0 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE Tin/Lead (Sn/Pb) THROUGH-HOLE SINGLE INTERSIL CORP not_compliant EAR99
IRFU214PBF
Vishay Siliconix
Check for Price Yes Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 250 V 1 2.2 A 2 Ω AVALANCHE RATED 190 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 8.8 A SWITCHING SILICON TO-251AA R-PSIP-T3 Not Qualified 150 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE VISHAY SILICONIX unknown EAR99 TO-251AA ROHS COMPLIANT, PLASTIC, IPAK-3 3
IRFU214
Fairchild Semiconductor Corporation
Check for Price No Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 250 V 1 2.2 A 2 Ω 61 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 8.8 A SWITCHING SILICON TO-251AA R-PSIP-T3 e0 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE TIN LEAD THROUGH-HOLE SINGLE FAIRCHILD SEMICONDUCTOR CORP unknown EAR99
IRFU214B
Fairchild Semiconductor Corporation
Check for Price No No Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 250 V 1 2.2 A 2 Ω 45 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 8.5 A SWITCHING SILICON R-PSIP-T3 e0 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR IN-LINE TIN LEAD THROUGH-HOLE SINGLE FAIRCHILD SEMICONDUCTOR CORP compliant EAR99 IN-LINE, R-PSIP-T3 3
IRFU214
Samsung Semiconductor
Check for Price Obsolete N-CHANNEL NO SINGLE 3 250 V 1 2.2 A 2 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W SILICON R-PSIP-T3 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE SAMSUNG SEMICONDUCTOR INC unknown EAR99 IN-LINE, R-PSIP-T3 3
IRFU214BTU
Fairchild Semiconductor Corporation
Check for Price No Obsolete N-CHANNEL NO SINGLE 1 2.2 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W e0 150 °C Tin/Lead (Sn/Pb) FAIRCHILD SEMICONDUCTOR CORP compliant EAR99
IRFU214ATU
Fairchild Semiconductor Corporation
Check for Price No Obsolete N-CHANNEL NO SINGLE 1 2.2 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W e0 150 °C Tin/Lead (Sn/Pb) FAIRCHILD SEMICONDUCTOR CORP unknown EAR99 ,
IRFU214A
Samsung Semiconductor
Check for Price Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 250 V 1 2.2 A 2 Ω 61 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 8.5 A SILICON R-PSIP-T3 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE SAMSUNG SEMICONDUCTOR INC unknown EAR99 IN-LINE, R-PSIP-T3 3