Filter Your Search
1 - 10 of 15 results
Select Parts | Part Number |
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IRFU214PBF
Vishay Intertechnologies
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IRFU214PBF
International Rectifier
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IRFU214
Intersil Corporation
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IRFU214PBF
Vishay Siliconix
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IRFU214
Fairchild Semiconductor Corporation
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IRFU214B
Fairchild Semiconductor Corporation
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IRFU214
Samsung Semiconductor
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IRFU214BTU
Fairchild Semiconductor Corporation
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IRFU214ATU
Fairchild Semiconductor Corporation
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IRFU214A
Samsung Semiconductor
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Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||||
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Composite Price
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Pbfree Code
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Rohs Code
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Part Life Cycle Code
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Polarity/Channel Type |
Surface Mount
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Configuration |
Number of Terminals
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DS Breakdown Voltage-Min
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Number of Elements |
Drain Current-Max (ID)
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Drain-source On Resistance-Max
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Additional Feature
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Avalanche Energy Rating (Eas)
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FET Technology |
Operating Mode
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Power Dissipation-Max (Abs)
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Pulsed Drain Current-Max (IDM)
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Transistor Application
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Transistor Element Material
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JEDEC-95 Code
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JESD-30 Code
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JESD-609 Code
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Qualification Status
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Moisture Sensitivity Level
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Operating Temperature-Max
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Peak Reflow Temperature (Cel)
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Time@Peak Reflow Temperature-Max (s)
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Case Connection
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Package Body Material
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Package Shape
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Package Style
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Terminal Finish
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Terminal Form
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Terminal Position
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Ihs Manufacturer
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Reach Compliance Code
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ECCN Code
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Samacsys Manufacturer
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Part Package Code
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Package Description
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Pin Count
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Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 2.2 A | 2 Ω | 190 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 8.8 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Matte Tin (Sn) - annealed | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | not_compliant | EAR99 | Vishay | ||||||
Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 2.2 A | 2 Ω | AVALANCHE RATED | 190 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 8.8 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | TO-251AA | LEAD FREE, PLASTIC, IPAK-3 | 3 | |||||
No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 2.2 A | 2 Ω | 61 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 8.8 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Tin/Lead (Sn/Pb) | THROUGH-HOLE | SINGLE | INTERSIL CORP | not_compliant | EAR99 | ||||||||||
Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 2.2 A | 2 Ω | AVALANCHE RATED | 190 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 8.8 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | Not Qualified | 150 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | VISHAY SILICONIX | unknown | EAR99 | TO-251AA | ROHS COMPLIANT, PLASTIC, IPAK-3 | 3 | ||||||
No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 2.2 A | 2 Ω | 61 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 8.8 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | unknown | EAR99 | ||||||||||
No | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 2.2 A | 2 Ω | 45 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 8.5 A | SWITCHING | SILICON | R-PSIP-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | compliant | EAR99 | IN-LINE, R-PSIP-T3 | 3 | |||||||||
Obsolete | N-CHANNEL | NO | SINGLE | 3 | 250 V | 1 | 2.2 A | 2 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | SILICON | R-PSIP-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | IN-LINE, R-PSIP-T3 | 3 | ||||||||||||||||
No | Obsolete | N-CHANNEL | NO | SINGLE | 1 | 2.2 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | e0 | 150 °C | Tin/Lead (Sn/Pb) | FAIRCHILD SEMICONDUCTOR CORP | compliant | EAR99 | ||||||||||||||||||||||||||
No | Obsolete | N-CHANNEL | NO | SINGLE | 1 | 2.2 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | e0 | 150 °C | Tin/Lead (Sn/Pb) | FAIRCHILD SEMICONDUCTOR CORP | unknown | EAR99 | , | |||||||||||||||||||||||||
Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 2.2 A | 2 Ω | 61 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 8.5 A | SILICON | R-PSIP-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | IN-LINE, R-PSIP-T3 | 3 |
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IRFU214PBF
Vishay Intertechnologies
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$0.3858 | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 2.2 A | 2 Ω | 190 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 8.8 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Matte Tin (Sn) - annealed | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | not_compliant | EAR99 | Vishay | |||||||
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IRFU214PBF
International Rectifier
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Check for Price | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 2.2 A | 2 Ω | AVALANCHE RATED | 190 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 8.8 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | TO-251AA | LEAD FREE, PLASTIC, IPAK-3 | 3 | ||||||
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IRFU214
Intersil Corporation
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 2.2 A | 2 Ω | 61 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 8.8 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Tin/Lead (Sn/Pb) | THROUGH-HOLE | SINGLE | INTERSIL CORP | not_compliant | EAR99 | |||||||||||
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IRFU214PBF
Vishay Siliconix
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 2.2 A | 2 Ω | AVALANCHE RATED | 190 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 8.8 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | Not Qualified | 150 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | VISHAY SILICONIX | unknown | EAR99 | TO-251AA | ROHS COMPLIANT, PLASTIC, IPAK-3 | 3 | |||||||
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IRFU214
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 2.2 A | 2 Ω | 61 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 8.8 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | unknown | EAR99 | |||||||||||
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IRFU214B
Fairchild Semiconductor Corporation
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Check for Price | No | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 2.2 A | 2 Ω | 45 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 8.5 A | SWITCHING | SILICON | R-PSIP-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | compliant | EAR99 | IN-LINE, R-PSIP-T3 | 3 | ||||||||||
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IRFU214
Samsung Semiconductor
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE | 3 | 250 V | 1 | 2.2 A | 2 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | SILICON | R-PSIP-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | IN-LINE, R-PSIP-T3 | 3 | |||||||||||||||||
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IRFU214BTU
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE | 1 | 2.2 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | e0 | 150 °C | Tin/Lead (Sn/Pb) | FAIRCHILD SEMICONDUCTOR CORP | compliant | EAR99 | |||||||||||||||||||||||||||
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IRFU214ATU
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE | 1 | 2.2 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | e0 | 150 °C | Tin/Lead (Sn/Pb) | FAIRCHILD SEMICONDUCTOR CORP | unknown | EAR99 | , | ||||||||||||||||||||||||||
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IRFU214A
Samsung Semiconductor
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 2.2 A | 2 Ω | 61 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 8.5 A | SILICON | R-PSIP-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | IN-LINE, R-PSIP-T3 | 3 |