Parametric results for: IRFU120 under Power Field-Effect Transistors

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Manufacturer Part Number: irfu120
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IRFU120NPBF
Infineon Technologies AG
$0.4033 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 9.4 A 210 mΩ AVALANCHE RATED 91 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 38 A SWITCHING SILICON TO-251AA R-PSIP-T3 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE Matte Tin (Sn) - with Nickel (Ni) barrier THROUGH-HOLE SINGLE INFINEON TECHNOLOGIES AG IN-LINE, R-PSIP-T3 not_compliant EAR99 Infineon
IRFU120PBF
Vishay Intertechnologies
$0.5749 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 7.7 A 270 mΩ AVALANCHE RATED 210 mJ 34 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 31 A SWITCHING SILICON TO-251AA R-PSIP-T3 e3 Not Qualified 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC compliant EAR99 Vishay
IRFU120PBF
Vishay Siliconix
$0.6497 Yes Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 7.7 A 270 mΩ AVALANCHE RATED 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 31 A SWITCHING SILICON TO-251AA R-PSIP-T3 Not Qualified 150 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE VISHAY SILICONIX ROHS COMPLIANT, PLASTIC, IPAK-3 unknown EAR99 Vishay TO-251AA 3
IRFU1205PBF
Infineon Technologies AG
$0.7346 Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 55 V 1 20 A 27 mΩ AVALANCHE RATED, ULTRA-LOW RESISTANCE 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 69 W 160 A SWITCHING SILICON TO-251AA R-PSIP-T3 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN OVER NICKEL THROUGH-HOLE SINGLE INFINEON TECHNOLOGIES AG not_compliant EAR99 Infineon
IRFU120N
Harris Semiconductor
Check for Price No Obsolete N-CHANNEL NO SINGLE 1 7.7 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W e0 175 °C Tin/Lead (Sn/Pb) HARRIS SEMICONDUCTOR , unknown EAR99
IRFU120N
Intersil Corporation
Check for Price No Obsolete N-CHANNEL NO SINGLE 1 7.7 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W e0 175 °C Tin/Lead (Sn/Pb) HARRIS SEMICONDUCTOR , unknown EAR99
IRFU120
Samsung Semiconductor
Check for Price Obsolete N-CHANNEL NO SINGLE 3 100 V 1 8.4 A 270 mΩ 30 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 42 W 34 A SWITCHING SILICON 59 ns 58 ns R-PSIP-T3 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE SAMSUNG SEMICONDUCTOR INC IN-LINE, R-PSIP-T3 unknown EAR99 3 8541.29.00.95
IRFU120ATU
Fairchild Semiconductor Corporation
Check for Price Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 8.4 A 200 mΩ 141 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 32 W 34 A SWITCHING SILICON TO-251 R-PSIP-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN THROUGH-HOLE SINGLE FAIRCHILD SEMICONDUCTOR CORP IPAK-3 not_compliant EAR99 TO-251 3
IRFU120NPBF
International Rectifier
Check for Price Yes Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 9.4 A 210 mΩ AVALANCHE RATED 91 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 38 A SWITCHING SILICON TO-251AA R-PSIP-T3 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE Matte Tin (Sn) - with Nickel (Ni) barrier THROUGH-HOLE SINGLE INTERNATIONAL RECTIFIER CORP LEAD FREE, PLASTIC, IPAK-3 not_compliant EAR99 TO-251AA 3
IRFU120N
Infineon Technologies AG
Check for Price No Active N-CHANNEL NO SINGLE 3 100 V 1 9.1 A 210 mΩ AVALANCHE RATED, FAST SWITCHING 91 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 39 W 38 A SWITCHING SILICON TO-251AA R-PSIP-T3 e0 Not Qualified 1 175 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE Tin/Lead (Sn/Pb) THROUGH-HOLE SINGLE INFINEON TECHNOLOGIES AG IPAK-3 not_compliant EAR99 Infineon 8541.29.00.95