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IRFU120NPBF
Infineon Technologies AG
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$0.4033 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 9.4 A | 210 mΩ | AVALANCHE RATED | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 38 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | IN-LINE, R-PSIP-T3 | not_compliant | EAR99 | Infineon | |||||||||||
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IRFU120PBF
Vishay Intertechnologies
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$0.5749 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 7.7 A | 270 mΩ | AVALANCHE RATED | 210 mJ | 34 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 31 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e3 | Not Qualified | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | compliant | EAR99 | Vishay | |||||||||||
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IRFU120PBF
Vishay Siliconix
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$0.6497 | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 7.7 A | 270 mΩ | AVALANCHE RATED | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 31 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | Not Qualified | 150 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | VISHAY SILICONIX | ROHS COMPLIANT, PLASTIC, IPAK-3 | unknown | EAR99 | Vishay | TO-251AA | 3 | ||||||||||||
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IRFU1205PBF
Infineon Technologies AG
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$0.7346 | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 20 A | 27 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 69 W | 160 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | |||||||||||
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IRFU120N
Harris Semiconductor
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE | 1 | 7.7 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | e0 | 175 °C | Tin/Lead (Sn/Pb) | HARRIS SEMICONDUCTOR | , | unknown | EAR99 | ||||||||||||||||||||||||||||||||
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IRFU120N
Intersil Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE | 1 | 7.7 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | e0 | 175 °C | Tin/Lead (Sn/Pb) | HARRIS SEMICONDUCTOR | , | unknown | EAR99 | ||||||||||||||||||||||||||||||||
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IRFU120
Samsung Semiconductor
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE | 3 | 100 V | 1 | 8.4 A | 270 mΩ | 30 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 42 W | 34 A | SWITCHING | SILICON | 59 ns | 58 ns | R-PSIP-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | SAMSUNG SEMICONDUCTOR INC | IN-LINE, R-PSIP-T3 | unknown | EAR99 | 3 | 8541.29.00.95 | ||||||||||||||||
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IRFU120ATU
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 8.4 A | 200 mΩ | 141 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 32 W | 34 A | SWITCHING | SILICON | TO-251 | R-PSIP-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | IPAK-3 | not_compliant | EAR99 | TO-251 | 3 | |||||||||||||||
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IRFU120NPBF
International Rectifier
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 9.4 A | 210 mΩ | AVALANCHE RATED | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 38 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | LEAD FREE, PLASTIC, IPAK-3 | not_compliant | EAR99 | TO-251AA | 3 | |||||||||
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IRFU120N
Infineon Technologies AG
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Check for Price | No | Active | N-CHANNEL | NO | SINGLE | 3 | 100 V | 1 | 9.1 A | 210 mΩ | AVALANCHE RATED, FAST SWITCHING | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 39 W | 38 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e0 | Not Qualified | 1 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Tin/Lead (Sn/Pb) | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | IPAK-3 | not_compliant | EAR99 | Infineon | 8541.29.00.95 |