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IRFS640A
Samsung Semiconductor
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 9.8 A | 180 mΩ | 256 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 43 W | 39 A | SILICON | R-PSFM-T3 | Not Qualified | 150 °C | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | SAMSUNG SEMICONDUCTOR INC | TO-220F | FLANGE MOUNT, R-PSFM-T3 | 3 | unknown | EAR99 | ||||||||||
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IRFS640A
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 9.8 A | 180 mΩ | 256 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 43 W | 72 A | SWITCHING | SILICON | R-PSFM-T3 | e0 | Not Qualified | 150 °C | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | TIN LEAD | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-220F | FLANGE MOUNT, R-PSFM-T3 | 3 | unknown | EAR99 | ||||||
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IRFS640A
Rochester Electronics LLC
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Check for Price | No | No | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 9.8 A | 180 mΩ | 256 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 72 A | SWITCHING | SILICON | R-PSFM-T3 | e0 | COMMERCIAL | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | TIN LEAD | THROUGH-HOLE | SINGLE | ROCHESTER ELECTRONICS LLC | TO-220F | TO-220F, 3 PIN | 3 | unknown |