Parametric results for: IRFS510A under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

54.0 mJ 3

3 hits Apply

ISOLATED 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

100 V 3

3 hits Apply

Drain Current-Max (ID) (1)

4.5 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

400 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PSFM-T3 3

3 hits Apply

e3 2

3 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 1 Rochester Electronics LLC 1 Samsung Semiconductor 1

3 hits Apply

NOT APPLICABLE 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

175.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Active 1 Obsolete 1 Transferred 1

3 hits Apply

Yes 1

3 hits Apply

NOT APPLICABLE 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

21 W 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply