Parametric results for: IRFS31N20DTRR under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

420.0 mJ 3

5 hits Apply

DRAIN 3

5 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 3

5 hits Apply

DS Breakdown Voltage-Min (1)

200 V 3

5 hits Apply

Drain Current-Max (ID) (1)

31 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

82 mΩ 3

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PSSO-G2 3

5 hits Apply

e0 1 e3 3

5 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 3

5 hits Apply

1 5

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

2 3

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

175.0 °C 4

5 hits Apply

PLASTIC/EPOXY 3

5 hits Apply

RECTANGULAR 3

5 hits Apply

SMALL OUTLINE 3

5 hits Apply

Obsolete 3 Transferred 2

5 hits Apply

Yes 1

5 hits Apply

225 1 260 4

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

200 W 3

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply