Parametric results for: IRFS140 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

529.0 mJ 2

3 hits Apply

ISOLATED 2

3 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

100 V 3

3 hits Apply

Drain Current-Max (ID) (2)

19.4 A 1 23 A 2

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (2)

52 mΩ 2 77 mΩ 1

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PSFM-T3 2 R-PSIP-T3 1

3 hits Apply

e3 1

3 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 1 Samsung Semiconductor 2

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 1 175.0 °C 2

Min (°C) - Max (°C)

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 2 IN-LINE 1

3 hits Apply

Obsolete 2 Transferred 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

72 W 2 83 W 1

Min (W) - Max (W)

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply