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1 - 10 of 16 results
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IRFR9010PBF
Vishay Intertechnologies
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$0.4746 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 50 V | 1 | 5.3 A | 500 mΩ | AVALANCHE RATED | 136 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 21 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | VISHAY INTERTECHNOLOGY INC | unknown | EAR99 | Vishay | ||||||||||
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IRFR9010TRPBF
Vishay Siliconix
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$0.6108 | Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 50 V | 1 | 5.3 A | 500 mΩ | AVALANCHE RATED | 136 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 21 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | VISHAY SILICONIX | unknown | EAR99 | Vishay | TO-252 | SMALL OUTLINE, R-PSSO-G2 | 3 | ||||||
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IRFR9010PBF
Vishay Siliconix
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$0.6497 | Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 50 V | 1 | 5.3 A | 500 mΩ | AVALANCHE RATED | 136 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 21 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | VISHAY SILICONIX | unknown | EAR99 | Vishay | TO-252 | SMALL OUTLINE, R-PSSO-G2 | 3 | ||||||
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IRFR9010
Thomson Consumer Electronics
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Check for Price | No | Obsolete | P-CHANNEL | YES | SINGLE | 1 | 5.3 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | e0 | 150 °C | Tin/Lead (Sn/Pb) | THOMSON CONSUMER ELECTRONICS | unknown | EAR99 | |||||||||||||||||||||||||||||||
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IRFR9010TRL
International Rectifier
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Check for Price | No | Transferred | P-CHANNEL | YES | SINGLE | 2 | 50 V | 1 | 5.3 A | 500 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 21 A | SILICON | TO-252AA | R-PSSO-G2 | e0 | Not Qualified | 1 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | SMALL OUTLINE, R-PSSO-G2 | ||||||||||||||||||
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IRFR9010TRLPBF
Vishay Siliconix
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Check for Price | Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 50 V | 1 | 5.3 A | 500 mΩ | AVALANCHE RATED | 136 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 21 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | VISHAY SILICONIX | unknown | EAR99 | TO-252 | SMALL OUTLINE, R-PSSO-G2 | 3 | |||||||
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IRFR9010TR
International Rectifier
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Check for Price | Transferred | P-CHANNEL | YES | SINGLE | 2 | 50 V | 1 | 5.3 A | 500 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 21 A | SILICON | TO-252AA | R-PSSO-G2 | e0 | Not Qualified | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | unknown | EAR99 | SMALL OUTLINE, R-PSSO-G2 | ||||||||||||||||||||
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IRFR9010PBF
International Rectifier
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Check for Price | Yes | Transferred | P-CHANNEL | YES | SINGLE | 2 | 50 V | 1 | 5.3 A | 500 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 21 A | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN OVER NICKEL | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | |||||||||||||||||||
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IRFR9010TRPBF
Vishay Intertechnologies
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Check for Price | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 50 V | 1 | 5.3 A | 500 mΩ | AVALANCHE RATED | 136 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 21 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | VISHAY INTERTECHNOLOGY INC | compliant | EAR99 | Vishay | ||||||||||
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IRFR9010-T1
Samsung Semiconductor
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Check for Price | Obsolete | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 50 V | 1 | 5.3 A | 500 mΩ | 240 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 21 A | SWITCHING | SILICON | 79 ns | 80.2 ns | R-PSSO-G2 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | SMALL OUTLINE, R-PSSO-G2 | 3 | 8541.29.00.95 |