Parametric results for: IRFR3504ZTRR under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, HIGH RELIABILITY 1 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 1

4 hits Apply

77.0 mJ 2

4 hits Apply

DRAIN 2

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

40 V 2

4 hits Apply

Drain Current-Max (ID) (1)

42 A 3

4 hits Apply

Drain-source On Resistance-Max (1)

9 mΩ 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

TO-252AA 2

4 hits Apply

R-PSSO-G2 2

4 hits Apply

e3 2

4 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 2

4 hits Apply

1 2

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

2 2

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 1 175.0 °C 2

Min (°C) - Max (°C)

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

SMALL OUTLINE 2

4 hits Apply

Active 1 Not Recommended 1 Obsolete 2

4 hits Apply

Yes 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

90 W 3

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply