Parametric results for: IRFR220BTM under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

65.0 mJ 1

3 hits Apply

DRAIN 1

3 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

200 V 1

3 hits Apply

Drain Current-Max (ID) (1)

4.6 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

800 mΩ 1

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PSSO-G2 1

3 hits Apply

e0 1 e3 2

3 hits Apply

Manufacturer (1)

Fairchild Semiconductor Corporation 3

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 1

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

SMALL OUTLINE 1

3 hits Apply

Obsolete 3

3 hits Apply

260 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

2.5 W 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply