Parametric results for: IRFR120TRRPBF under Power Field-Effect Transistors

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Manufacturer Part Number: irfr120trrpbf
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IRFR120TRRPBF
International Rectifier
Check for Price Yes Transferred N-CHANNEL YES SINGLE 2 100 V 1 7.7 A 270 mΩ 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 42 W 31 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN OVER NICKEL GULL WING SINGLE INTERNATIONAL RECTIFIER CORP compliant EAR99 8541.29.00.95
IRFR120TRRPBF
Vishay Siliconix
Check for Price Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 7.7 A 270 mΩ AVALANCHE RATED 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 31 A SWITCHING SILICON TO-252AA R-PSSO-G2 Not Qualified 150 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE VISHAY SILICONIX unknown EAR99 TO-252AA ROHS COMPLIANT, PLASTIC, DPAK-3 3 Vishay
IRFR120TRRPBF-BE3
Vishay Intertechnologies
Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 7.7 A 270 mΩ AVALANCHE RATED 210 mJ 34 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 31 A SWITCHING SILICON TO-252AA R-PSSO-G2 150 °C -55 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE VISHAY INTERTECHNOLOGY INC unknown EAR99 Vishay
IRFR120TRRPBF
Vishay Intertechnologies
Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 7.7 A 270 mΩ AVALANCHE RATED 210 mJ 34 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 31 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE VISHAY INTERTECHNOLOGY INC not_compliant EAR99 Vishay