Parametric results for: IRFP260 under Power Field-Effect Transistors

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Manufacturer Part Number: irfp260
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IRFP260NPBF
International Rectifier
$1.1248 Yes Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 50 A 40 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 560 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 W 200 A SWITCHING SILICON TO-247AC R-PSFM-T3 e3 Not Qualified 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN OVER NICKEL THROUGH-HOLE SINGLE INTERNATIONAL RECTIFIER CORP TO-247AC LEAD FREE PACKAGE-3 3 compliant EAR99 8541.29.00.95
IRFP260MPBF
Infineon Technologies AG
$1.7156 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 50 A 40 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 560 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 W 200 A SWITCHING SILICON TO-247AC R-PSFM-T3 e3 Not Qualified 175 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Matte Tin (Sn) - with Nickel (Ni) barrier THROUGH-HOLE SINGLE INFINEON TECHNOLOGIES AG LEAD FREE, PLASTIC PACKAGE-3 compliant EAR99 Infineon
IRFP260NPBF
Infineon Technologies AG
$1.9247 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 50 A 40 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 560 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 W 200 A SWITCHING SILICON TO-247AC R-PSFM-T3 e3 Not Qualified 175 °C -55 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Matte Tin (Sn) - with Nickel (Ni) barrier THROUGH-HOLE SINGLE INFINEON TECHNOLOGIES AG compliant EAR99 Infineon
IRFP260PBF
Vishay Intertechnologies
$3.0594 Yes Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 46 A 55 mΩ 1000 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 280 W 180 A SWITCHING SILICON TO-247AC R-PSFM-T3 e3 Not Qualified 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC TO-247AC 3 compliant EAR99 Vishay
IRFP260MPBF
International Rectifier
Check for Price Yes Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 50 A 40 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 560 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 W 200 A SWITCHING SILICON TO-247AC R-PSFM-T3 e3 Not Qualified 175 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Matte Tin (Sn) - with Nickel (Ni) barrier THROUGH-HOLE SINGLE INTERNATIONAL RECTIFIER CORP TO-247AC LEAD FREE, PLASTIC PACKAGE-3 3 compliant EAR99
IRFP260N
Infineon Technologies AG
Check for Price No Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 50 A 40 mΩ AVALANCHE RATED 560 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 A SWITCHING SILICON TO-247AC R-PSFM-T3 e0 Not Qualified 175 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Tin/Lead (Sn/Pb) THROUGH-HOLE SINGLE INFINEON TECHNOLOGIES AG TO-247AC, 3 PIN compliant EAR99 Infineon
AUIRFP2602
Infineon Technologies AG
Check for Price Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 24 V 1 180 A 1.6 mΩ 400 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 380 W 1.58 kA SWITCHING SILICON TO-247AC R-PSFM-T3 AEC-Q101 175 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE INFINEON TECHNOLOGIES AG compliant EAR99 Infineon
IRFP260
IXYS Corporation
Check for Price Yes Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 46 A 55 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 184 A SWITCHING SILICON TO-247AD R-PSFM-T3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE IXYS CORP TO-247AD TO-247AD, 3 PIN 3 compliant EAR99
IRFP260
International Rectifier
Check for Price No Transferred N-CHANNEL NO SINGLE 3 200 V 1 46 A 55 mΩ 1000 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 280 W 280 W 180 A SWITCHING SILICON TO-247AC R-PSFM-T3 e0 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT TIN LEAD THROUGH-HOLE SINGLE INTERNATIONAL RECTIFIER CORP FLANGE MOUNT, R-PSFM-T3 compliant EAR99 8541.29.00.95
IRFP260PBF
Vishay Siliconix
Check for Price Yes Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 46 A 55 mΩ AVALANCHE RATED 1000 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 180 A SWITCHING SILICON TO-247 R-PSFM-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN THROUGH-HOLE SINGLE VISHAY SILICONIX TO-247 FLANGE MOUNT, R-PSFM-T3 3 compliant EAR99