Parametric results for: IRFM250-JQR-B under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

ISOLATED 4

4 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

200 V 4

4 hits Apply

Drain Current-Max (ID) (1)

27.4 A 4

4 hits Apply

Drain-source On Resistance-Max (2)

100 mΩ 2 105 mΩ 2

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-254AA 4

4 hits Apply

S-MSFM-P3 4

4 hits Apply

e1 2

4 hits Apply

Manufacturer (2)

TT Electronics Power and Hybrid / Semelab Limited 2 TT Electronics Resistors 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 2

4 hits Apply

METAL 4

4 hits Apply

SQUARE 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Active 4

4 hits Apply

No 1 Yes 1

4 hits Apply

NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply