Parametric results for: IRFK2D250 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

ISOLATED 1

2 hits Apply

Configuration (1)

COMPLEX 1

2 hits Apply

DS Breakdown Voltage-Min (1)

200 V 1

2 hits Apply

Drain Current-Max (ID) (1)

54 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

43 mΩ 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

TO-240AA 1

2 hits Apply

R-PUFM-X7 1

2 hits Apply

Manufacturer (2)

International Rectifier 1 Thomson Consumer Electronics 1

2 hits Apply

Number of Elements (2)

1 1 4 1

Min - Max

2 hits Apply

Number of Terminals (1)

7 1

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

FLANGE MOUNT 1

2 hits Apply

Obsolete 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

2 hits Apply

500 W 1

2 hits Apply

500 W 2

2 hits Apply

Surface Mount (1)

NO 1

2 hits Apply