Parametric results for: IRFF120R under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

36.0 mJ 2

5 hits Apply

DRAIN 4

5 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 2

5 hits Apply

DS Breakdown Voltage-Min (1)

100 V 4

5 hits Apply

Drain Current-Max (ID) (1)

6 A 5

5 hits Apply

Drain-source On Resistance-Max (2)

300 mΩ 2 345 mΩ 2

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-205AF 4

5 hits Apply

O-MBCY-W3 4

5 hits Apply

e0 3 e1 2

5 hits Apply

Manufacturer (5)

Harris Semiconductor 1 Intersil Corporation 1 Thomson Consumer Electronics 1 TT Electronics Power and Hybrid / Semelab Limited 1 TT Electronics Resistors 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 4

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 5

5 hits Apply

METAL 4

5 hits Apply

ROUND 4

5 hits Apply

CYLINDRICAL 4

5 hits Apply

Active 2 Obsolete 3

5 hits Apply

Yes 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

20 W 2

5 hits Apply

20 W 3

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply