Parametric results for: IRFE220 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 3

11 hits Apply

0.242 mJ 3

11 hits Apply

SOURCE 3

11 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

11 hits Apply

DS Breakdown Voltage-Min (1)

200 V 11

11 hits Apply

Drain Current-Max (ID) (1)

2.8 A 11

11 hits Apply

Drain-source On Resistance-Max (2)

850 mΩ 3 920 mΩ 8

Min (Ω) - Max (Ω)

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

R-CQCC-N15 11

11 hits Apply

e0 1 e4 4

11 hits Apply

Manufacturer (4)

Infineon Technologies AG 1 International Rectifier 2 TT Electronics Power and Hybrid / Semelab Limited 4 TT Electronics Resistors 4

11 hits Apply

Number of Elements (1)

1 3

11 hits Apply

Number of Terminals (1)

15 11

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

150.0 °C 2

11 hits Apply

CERAMIC, METAL-SEALED COFIRED 11

11 hits Apply

RECTANGULAR 11

11 hits Apply

CHIP CARRIER 11

11 hits Apply

Active 9 Obsolete 1 Transferred 1

11 hits Apply

No 3 Yes 3

11 hits Apply

260 1 NOT SPECIFIED 5

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

11 hits Apply

14 W 1

11 hits Apply

14 W 1

11 hits Apply

Surface Mount (1)

YES 11

11 hits Apply