Parametric results for: IRFD9210 under Small Signal Field-Effect Transistors
Filter Your Search
1 - 7 of 7 results
|
Select parts from the table below to compare.
Compare
Compare
|
IRFD9210PBF
Vishay Intertechnologies
|
$0.4142 | Yes | Yes | End Of Life | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 400 mA | 3 Ω | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.2 A | SWITCHING | SILICON | R-PDIP-T3 | Not Qualified | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | DUAL | VISHAY INTERTECHNOLOGY INC | DIP | HVMDIP-4 | 4 | compliant | EAR99 | Vishay | |||||||
|
|
IRFD9210
International Rectifier
|
Check for Price | No | No | Transferred | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 400 mA | 3 Ω | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.3 W | 3.2 A | SWITCHING | SILICON | R-PDIP-T3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | DUAL | INTERNATIONAL RECTIFIER CORP | DIP | IN-LINE, R-PDIP-T3 | 4 | compliant | EAR99 | 8541.29.00.95 | |||||||
|
|
IRFD9210
Vishay Siliconix
|
Check for Price | No | No | Transferred | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 400 mA | 3 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDIP-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | DUAL | VISHAY SILICONIX | DIP | IN-LINE, R-PDIP-T3 | 4 | compliant | EAR99 | Vishay | |||||||||||
|
|
IRFD9210
Thomson Consumer Electronics
|
Check for Price | No | Obsolete | P-CHANNEL | NO | SINGLE | 1 | 400 mA | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | e0 | 150 °C | Tin/Lead (Sn/Pb) | THOMSON CONSUMER ELECTRONICS | , | unknown | EAR99 | ||||||||||||||||||||||||||
|
|
IRFD9210
Vishay Intertechnologies
|
Check for Price | No | No | Obsolete | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 400 mA | 3 Ω | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.2 A | SWITCHING | SILICON | R-PDIP-T3 | e0 | Not Qualified | 150 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | DUAL | VISHAY INTERTECHNOLOGY INC | DIP | HVMDIP-4 | 4 | compliant | EAR99 | Vishay | |||||||
|
|
IRFD9210PBF
International Rectifier
|
Check for Price | Yes | Yes | Transferred | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 400 mA | 3 Ω | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.3 W | 3.2 A | SWITCHING | SILICON | R-PDIP-T3 | e3 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN | THROUGH-HOLE | DUAL | INTERNATIONAL RECTIFIER CORP | DIP | IN-LINE, R-PDIP-T3 | 4 | compliant | EAR99 | 8541.29.00.95 | |||||||
|
|
IRFD9210PBF
Vishay Siliconix
|
Check for Price | Yes | Yes | Transferred | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 400 mA | 3 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDIP-T3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | DUAL | VISHAY SILICONIX | DIP | IN-LINE, R-PDIP-T3 | 4 | compliant | EAR99 | Vishay |