Parametric results for: IRFC150 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount Configuration (1)

SINGLE 7

7 hits Apply

DS Breakdown Voltage-Min (1)

100 V 3

7 hits Apply

Drain Current-Max (ID) (2)

34 A 1 40 A 1

Min (A) - Max (A)

7 hits Apply

Drain-source On Resistance-Max (2)

55 mΩ 2 70 mΩ 1

Min (Ω) - Max (Ω)

7 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

7 hits Apply

S-XUUC-N2 1 X-XUUC-N 2

7 hits Apply

e0 1

7 hits Apply

Manufacturer (6)

Infineon Technologies AG 1 International Rectifier 2 IXYS Corporation 1 Littelfuse Inc 1 Microsemi Corporation 1 Silicon Transistor Corporation 1

7 hits Apply

Number of Elements (1)

1 7

7 hits Apply

Number of Terminals (1)

2 1

7 hits Apply

ENHANCEMENT MODE 7

7 hits Apply

UNSPECIFIED 3

7 hits Apply

SQUARE 1 UNSPECIFIED 2

7 hits Apply

UNCASED CHIP 3

7 hits Apply

Active 1 Obsolete 3 Transferred 3

7 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 7

7 hits Apply

Surface Mount (1)

YES 7

7 hits Apply