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IRFBL18N50K
International Rectifier
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Check for Price | No | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 18 A | 250 mΩ | AVALANCHE RATED | 430 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 72 A | SWITCHING | SILICON | R-PSSO-G2 | e0 | Not Qualified | 1 | 150 °C | 225 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Lead (Sn/Pb) | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | SMALL OUTLINE, R-PSSO-G2 | 3 | compliant | EAR99 | ||
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IRFBL18N50KPBF
International Rectifier
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 18 A | 250 mΩ | AVALANCHE RATED | 430 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 72 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN OVER NICKEL | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | SMALL OUTLINE, R-PSSO-G2 | 3 | compliant | EAR99 | |||||
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IRFBL18N50K
Infineon Technologies AG
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 18 A | 250 mΩ | AVALANCHE RATED | 430 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 72 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN OVER NICKEL | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | D2PAK-3 | unknown | EAR99 | ||||||
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IRFBL18N50KPBF
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 18 A | 250 mΩ | AVALANCHE RATED | 430 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 72 A | SWITCHING | SILICON | R-PSSO-G2 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | compliant | EAR99 |