Parametric results for: IRFBE30 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 16

63 hits Apply

260.0 mJ 53

63 hits Apply

DRAIN 55

63 hits Apply

Configuration (2)

SINGLE 45 SINGLE WITH BUILT-IN DIODE 16

63 hits Apply

DS Breakdown Voltage-Min (1)

800 V 60

63 hits Apply

Drain Current-Max (ID) (2)

3.1 A 2 4.1 A 59

Min (A) - Max (A)

63 hits Apply

Drain-source On Resistance-Max (2)

3 Ω 58 3.2 Ω 2

Min (Ω) - Max (Ω)

63 hits Apply

METAL-OXIDE SEMICONDUCTOR 61

63 hits Apply

TO-220AB 46 TO-262AA 4 TO-263AB 2

63 hits Apply

R-PSFM-T3 48 R-PSIP-T3 4 R-PSSO-G2 8

63 hits Apply

e0 26 e3 31

63 hits Apply

Manufacturer (5)

International Rectifier 48 Semiconductor Technology Inc 1 Thomson Consumer Electronics 1 Vishay Intertechnologies 8 Vishay Siliconix 5

63 hits Apply

1 7

63 hits Apply

Number of Elements (1)

1 61

63 hits Apply

Number of Terminals (2)

2 8 3 52

63 hits Apply

ENHANCEMENT MODE 61

63 hits Apply

150.0 °C 52

63 hits Apply

PLASTIC/EPOXY 60

63 hits Apply

RECTANGULAR 60

63 hits Apply

FLANGE MOUNT 48 IN-LINE 4 SMALL OUTLINE 8

63 hits Apply

Active 5 Contact Manufacturer 1 Obsolete 4 Transferred 53

63 hits Apply

No 25 Yes 32

63 hits Apply

225 2 250 1 260 8 NOT SPECIFIED 2

63 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 61

63 hits Apply

125 W 38

63 hits Apply

125 W 12

63 hits Apply

Surface Mount (2)

NO 53 YES 8

63 hits Apply