Parametric results for: IRFB18N50K%20EQUIVALENT under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 6

6 hits Apply

370.0 mJ 6

6 hits Apply

DRAIN 4

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

500 V 6

6 hits Apply

Drain Current-Max (ID) (1)

17 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

290 mΩ 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-220AB 6

6 hits Apply

R-PSFM-T3 6

6 hits Apply

e0 3 e2 1 e3 2

6 hits Apply

Manufacturer (3)

International Rectifier 2 Vishay Intertechnologies 2 Vishay Siliconix 2

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 6

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

FLANGE MOUNT 6

6 hits Apply

End Of Life 1 Obsolete 1 Transferred 4

6 hits Apply

No 2 Yes 2

6 hits Apply

260 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

220 W 4

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply