Parametric results for: IRF9952 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, HIGH RELIABILITY 7 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 2 HIGH RELIABILITY 6

15 hits Apply

44.0 mJ 15

15 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 15

15 hits Apply

DS Breakdown Voltage-Min (1)

30 V 15

15 hits Apply

Drain Current-Max (ID) (2)

2.8 A 4 3.5 A 10

Min (A) - Max (A)

15 hits Apply

Drain-source On Resistance-Max (1)

100 mΩ 15

15 hits Apply

METAL-OXIDE SEMICONDUCTOR 15

15 hits Apply

MS-012AA 12

15 hits Apply

R-PDSO-G8 15

15 hits Apply

e0 3 e3 5

15 hits Apply

Manufacturer (2)

Infineon Technologies AG 6 International Rectifier 9

15 hits Apply

1 10 2 1

15 hits Apply

Number of Elements (1)

2 15

15 hits Apply

Number of Terminals (1)

8 15

15 hits Apply

ENHANCEMENT MODE 15

15 hits Apply

150.0 °C 11

15 hits Apply

-55.0 °C 1

15 hits Apply

PLASTIC/EPOXY 15

15 hits Apply

RECTANGULAR 15

15 hits Apply

SMALL OUTLINE 15

15 hits Apply

Active 3 Obsolete 6 Transferred 6

15 hits Apply

Yes 4

15 hits Apply

260 4 NOT SPECIFIED 3

15 hits Apply

Polarity/Channel Type (1)

N-CHANNEL AND P-CHANNEL 15

15 hits Apply

2 W 9

15 hits Apply

Surface Mount (1)

YES 15

15 hits Apply