Parametric results for: IRF9131 under Other Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

500.0 mJ 2

5 hits Apply

DRAIN 3

5 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 2

5 hits Apply

DS Breakdown Voltage-Min (1)

80 V 3

5 hits Apply

Drain Current-Max (ID) (1)

12 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

300 mΩ 3

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-204AA 3

5 hits Apply

O-MBFM-P2 3

5 hits Apply

e0 5

5 hits Apply

Manufacturer (5)

Harris Semiconductor 1 International Rectifier 1 Intersil Corporation 1 Samsung Semiconductor 1 Thomson Consumer Electronics 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

2 3

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 5

5 hits Apply

METAL 3

5 hits Apply

ROUND 3

5 hits Apply

FLANGE MOUNT 3

5 hits Apply

Obsolete 4 Transferred 1

5 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 5

5 hits Apply

75 W 2

5 hits Apply

75 W 5

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply