Parametric results for: IRF840B under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

56.0 mJ 3 320.0 mJ 4

Min (mJ) - Max (mJ)

9 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 7

9 hits Apply

DS Breakdown Voltage-Min (1)

500 V 7

9 hits Apply

Drain Current-Max (ID) (2)

8 A 4 8.7 A 3

Min (A) - Max (A)

9 hits Apply

Drain-source On Resistance-Max (2)

800 mΩ 4 850 mΩ 3

Min (Ω) - Max (Ω)

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

9 hits Apply

8 pF 3

9 hits Apply

TO-220AB 7

9 hits Apply

R-PSFM-T3 7

9 hits Apply

e3 5

9 hits Apply

Manufacturer (5)

Fairchild Semiconductor Corporation 3 Micro Commercial Components 2 Rochester Electronics LLC 1 Vishay Intertechnologies 2 Vishay Siliconix 1

9 hits Apply

1 2 NOT APPLICABLE 1

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Number of Elements (1)

1 7

9 hits Apply

Number of Terminals (1)

3 7

9 hits Apply

ENHANCEMENT MODE 7

9 hits Apply

150.0 °C 5

9 hits Apply

-55.0 °C 3

9 hits Apply

PLASTIC/EPOXY 7

9 hits Apply

RECTANGULAR 7

9 hits Apply

FLANGE MOUNT 7

9 hits Apply

Active 6 Obsolete 3

9 hits Apply

Yes 1

9 hits Apply

260 2 NOT SPECIFIED 1

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 7

9 hits Apply

134 W 1 156 W 3

Min (W) - Max (W)

9 hits Apply

Surface Mount (1)

NO 7

9 hits Apply