Parametric results for: IRF8113 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

48.0 mJ 7

14 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 7

14 hits Apply

DS Breakdown Voltage-Min (1)

30 V 7

14 hits Apply

Drain Current-Max (ID) (1)

17.2 A 9

14 hits Apply

Drain-source On Resistance-Max (1)

5.6 mΩ 7

14 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

14 hits Apply

250 pF 1

14 hits Apply

MS-012AA 7

14 hits Apply

R-PDSO-G8 7

14 hits Apply

e0 1 e3 3

14 hits Apply

Manufacturer (2)

Infineon Technologies AG 5 International Rectifier 9

14 hits Apply

1 9

14 hits Apply

Number of Elements (1)

1 9

14 hits Apply

Number of Terminals (1)

8 7

14 hits Apply

ENHANCEMENT MODE 9

14 hits Apply

150.0 °C 7

14 hits Apply

-55.0 °C 1

14 hits Apply

PLASTIC/EPOXY 7

14 hits Apply

RECTANGULAR 7

14 hits Apply

SMALL OUTLINE 7

14 hits Apply

Not Recommended 2 Obsolete 7 Transferred 5

14 hits Apply

Yes 4

14 hits Apply

260 4 NOT SPECIFIED 4

14 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

14 hits Apply

2.5 W 7

14 hits Apply

Surface Mount (1)

YES 9

14 hits Apply