Parametric results for: IRF7523D1 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 4

4 hits Apply

Drain Current-Max (ID) (1)

2.7 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

130 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PDSO-G8 1 S-PDSO-G8 3

4 hits Apply

e0 2 e3 2

4 hits Apply

Manufacturer (1)

International Rectifier 4

4 hits Apply

1 2 2 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

8 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 3

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 1 SQUARE 3

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Obsolete 4

4 hits Apply

260 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

420 mW 1 1.25 W 2

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply