Parametric results for: IRF7413-TR under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 1 LOGIC LEVEL COMPATIBLE 2 ULTRA LOW RESISTANCE 1

6 hits Apply

260.0 mJ 4

6 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (1)

30 V 4

6 hits Apply

Drain Current-Max (ID) (1)

13 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

11 mΩ 4

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

MS-012AA 4

6 hits Apply

R-PDSO-G8 4

6 hits Apply

e0 1 e3 3

6 hits Apply

Manufacturer (2)

Infineon Technologies AG 3 International Rectifier 3

6 hits Apply

1 4

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

8 4

6 hits Apply

ENHANCEMENT MODE 4

6 hits Apply

150.0 °C 4

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

SMALL OUTLINE 4

6 hits Apply

Obsolete 4 Transferred 2

6 hits Apply

Yes 1

6 hits Apply

260 3 NOT SPECIFIED 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

2.5 W 4

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply