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IRF640N
International Rectifier
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$0.1875 | No | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 18 A | 150 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 247 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 72 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e0 | Not Qualified | 175 °C | 225 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin/Lead (Sn/Pb) | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-220AB | TO-220AB, 3 PIN | 3 | compliant | EAR99 | |||||||||
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IRF640NPBF
International Rectifier
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$0.2774 | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 18 A | 150 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 247 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 72 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 150 °C | 250 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-220AB | LEAD FREE, PLASTIC PACKAGE-3 | 3 | compliant | EAR99 | 8541.29.00.95 | ||||||||
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IRF640NSPBF
International Rectifier
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$0.4000 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 150 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 247 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 72 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | D2PAK | LEAD FREE, PLASTIC, D2PAK-2/3 | 3 | not_compliant | EAR99 | 8541.29.00.95 | |||||||
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IRF640NPBF
Infineon Technologies AG
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$0.6154 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 18 A | 150 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 247 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 72 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | |||||||||||
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IRF640PBF
Vishay Siliconix
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$0.8456 | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 18 A | 180 mΩ | AVALANCHE RATED | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 72 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | VISHAY SILICONIX | TO-220AB | ROHS COMPLIANT, TO-220, 3 PIN | 3 | compliant | EAR99 | Vishay | |||||||||||||
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IRF640PBF
Vishay Intertechnologies
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$0.8732 | Yes | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 18 A | 180 mΩ | AVALANCHE RATED | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 72 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | TO-220AB | ROHS COMPLIANT PACKAGE-3 | 3 | not_compliant | EAR99 | 8541.29.00.95 | Vishay | ||||||
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IRF640NSTRRPBF
Infineon Technologies AG
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$0.9276 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 150 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 247 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 72 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | |||||||||||
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IRF640NSPBF
Infineon Technologies AG
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$0.9401 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 150 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 247 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 72 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN OVER NICKEL | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | |||||||||||
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IRF640NSTRLPBF
Infineon Technologies AG
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$0.9807 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 150 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 247 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 72 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | ||||||||||
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IRF640
Harris Semiconductor
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$1.0122 | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 18 A | 180 mΩ | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 125 W | 72 A | SWITCHING | SILICON | 122 ns | 98 ns | TO-220AB | R-PSFM-T3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin/Lead (Sn/Pb) | THROUGH-HOLE | SINGLE | HARRIS SEMICONDUCTOR | unknown | EAR99 | 8541.29.00.95 |