Parametric results for: IRF631 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LEADFORM OPTIONS ARE AVAILABLE 2

67 hits Apply

150.0 mJ 1 170.0 mJ 1

Min (mJ) - Max (mJ)

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DRAIN 51

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Configuration (3)

SINGLE 59 Single 1 SINGLE WITH BUILT-IN DIODE 6

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DS Breakdown Voltage-Min (1)

150 V 53

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Drain Current-Max (Abs) (ID) (1)

9 A 1

67 hits Apply

Drain Current-Max (ID) (1)

9 A 65

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Drain-source On Resistance-Max (1)

400 mΩ 52

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METAL-OXIDE SEMICONDUCTOR 66

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150 pF 2

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TO-220AB 8

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R-PSFM-T3 52

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e0 30 e3 33

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Manufacturer (21)

Advanced Microelectronic Products Inc 1 Diodes Incorporated 1 Fairchild Semiconductor Corporation 1 FCI Semiconductor 1 Freescale Semiconductor 1 General Electric Solid State 1 Harris Semiconductor 2 Infineon Technologies AG 22 International Rectifier 23 Intersil Corporation 2 Micro Electronics Corporation 1 Micro Electronics Ltd 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 National Semiconductor Corporation 1 New Jersey Semiconductor Products Inc 1 Rochester Electronics LLC 1 Samsung Semiconductor 1 Texas Instruments 1 Thomson Consumer Electronics 2 Zetex / Diodes Inc 1

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NOT SPECIFIED 1

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Number of Elements (1)

1 65

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Number of Terminals (1)

3 52

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ENHANCEMENT MODE 66

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150.0 °C 20

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PLASTIC/EPOXY 52

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RECTANGULAR 52

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FLANGE MOUNT 52

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Active 2 Contact Manufacturer 3 Obsolete 48 Transferred 14

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No 12 Yes 11

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235 2 NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 66

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75 W 6

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75 W 20

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Surface Mount (1)

NO 65

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