Parametric results for: IRF630F under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1

8 hits Apply

60.0 mJ 1 160.0 mJ 1

Min (mJ) - Max (mJ)

8 hits Apply

DRAIN 4 ISOLATED 2

8 hits Apply

Configuration (2)

SINGLE 5 SINGLE WITH BUILT-IN DIODE 2

8 hits Apply

DS Breakdown Voltage-Min (1)

200 V 6

8 hits Apply

Drain Current-Max (ID) (2)

6 A 1 9 A 2

Min (A) - Max (A)

8 hits Apply

Drain-source On Resistance-Max (1)

400 mΩ 6

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

8 hits Apply

50 pF 1

8 hits Apply

TO-220AB 5

8 hits Apply

R-PSFM-T3 6

8 hits Apply

e0 2 e3 4

8 hits Apply

Manufacturer (4)

HSMC Corporation 1 Inchange Semiconductor Company Ltd 1 International Rectifier 4 STMicroelectronics 2

8 hits Apply

Number of Elements (1)

1 7

8 hits Apply

Number of Terminals (1)

3 6

8 hits Apply

ENHANCEMENT MODE 7

8 hits Apply

150.0 °C 3

8 hits Apply

PLASTIC/EPOXY 6

8 hits Apply

RECTANGULAR 6

8 hits Apply

FLANGE MOUNT 6

8 hits Apply

Contact Manufacturer 1 Obsolete 3 Transferred 4

8 hits Apply

No 2 Yes 4

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 7

8 hits Apply

35 W 1

8 hits Apply

25 W 1 35 W 1 38 W 1

Min (W) - Max (W)

8 hits Apply

Surface Mount (1)

NO 7

8 hits Apply