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IRF550A
Samsung Semiconductor
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 40 A | 40 mΩ | 640 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 167 W | 160 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | Not Qualified | 175 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | SAMSUNG SEMICONDUCTOR INC | TO-220AB | FLANGE MOUNT, R-PSFM-T3 | 3 | unknown | EAR99 | |||||
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IRF550A
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 40 A | 40 mΩ | 640 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 167 W | 160 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-220AB | FLANGE MOUNT, R-PSFM-T3 | 3 | unknown | EAR99 | ||
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IRF550AJ69Z
Fairchild Semiconductor Corporation
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 40 A | 40 mΩ | 640 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 160 A | SWITCHING | SILICON | R-PSFM-T3 | Not Qualified | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | SFM | FLANGE MOUNT, R-PSFM-T3 | 3 | unknown | EAR99 |