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IRF540ZPBF
International Rectifier
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$0.3750 | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 36 A | 26.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 91 W | 140 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | 250 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-220AB | LEAD FREE, PLASTIC PACKAGE-3 | 3 | unknown | EAR99 | 8541.29.00.95 | ||||||
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IRF540NSPBF
International Rectifier
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$0.4200 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 33 A | 44 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 185 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 94 W | 110 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | LEAD FREE, PLASTIC, D2PAK-3 | 3 | not_compliant | EAR99 | ||||||||
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IRF540ZSPBF
International Rectifier
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$0.4250 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 36 A | 26.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 92 W | 140 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | D2PAK | LEAD FREE, PLASTIC, D2PAK-3 | 3 | not_compliant | EAR99 | 8541.29.00.95 | |||||
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IRF540NPBF
Infineon Technologies AG
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$0.5542 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 33 A | 44 mΩ | HIGH RELIABILITY | 185 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 110 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | -55 °C | 250 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin (Sn) | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | |||||||||
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IRF540NSTRRPBF
Infineon Technologies AG
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$0.6069 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 33 A | 44 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 185 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 110 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | Infineon | 1996-04-01 | ||||||||
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IRF540ZPBF
Infineon Technologies AG
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$0.6348 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 36 A | 26.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 91 W | 140 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin (Sn) | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | FLANGE MOUNT, R-PSFM-T3 | compliant | EAR99 | Infineon | |||||||||
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IRF540ZSPBF
Infineon Technologies AG
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$0.7853 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 36 A | 26.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 92 W | 140 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN OVER NICKEL | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | Infineon | ||||||||
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IRF540SPBF
Vishay Intertechnologies
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$0.8690 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 28 A | 77 mΩ | AVALANCHE RATED | 230 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 110 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | VISHAY INTERTECHNOLOGY INC | D2PAK | SMALL OUTLINE, R-PSSO-G2 | 3 | not_compliant | EAR99 | Vishay | ||||||||
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IRF540NLPBF
International Rectifier
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$0.9320 | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 33 A | 44 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 185 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 110 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-262AA | IN-LINE, R-PSIP-T3 | 3 | not_compliant | EAR99 | ||||||
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IRF540ZLPBF
Infineon Technologies AG
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$0.9624 | Yes | End Of Life | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 36 A | 26.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 92 W | 140 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon |