Parametric results for: IRF53 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 15 AVALANCHE RATED, HIGH RELIABILITY 18 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 1 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 1 FAST SWITCHING 6 LEADFORM OPTIONS ARE AVAILABLE 9 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY 7

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69.0 mJ 63 70.0 mJ 1 80.0 mJ 1 85.0 mJ 1 93.0 mJ 18 98.0 mJ 3 150.0 mJ 3 261.0 mJ 6 280.0 mJ 19

Min (mJ) - Max (mJ)

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DRAIN 443 ISOLATED 5

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Configuration (3)

SINGLE 441 Single 4 SINGLE WITH BUILT-IN DIODE 97

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DS Breakdown Voltage-Min (5)

55 V 92 60 V 4 80 V 110 100 V 278 600 V 1

Min (V) - Max (V)

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Drain Current-Max (Abs) (ID) (2)

12 A 2 14 A 2

Min (A) - Max (A)

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Drain Current-Max (ID) (10)

8 A 2 9 A 1 10 A 3 12 A 135 14 A 196 15 A 76 16 A 3 17 A 23 22 A 3 31 A 92

Min (A) - Max (A)

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Drain-source On Resistance-Max (10)

60 mΩ 87 64 mΩ 2 65 mΩ 4 90 mΩ 18 110 mΩ 84 140 mΩ 3 160 mΩ 164 180 mΩ 4 230 mΩ 107 250 mΩ 4

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 542

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100 pF 2 150 pF 9

Min (pF) - Max (pF)

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TO-220 1 TO-220AB 296 TO-252 2 TO-252AA 4 TO-262AA 4 TO-263AB 10

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R-PSFM-T2 1 R-PSFM-T3 435 R-PSIP-T3 4 R-PSSO-G2 37

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e0 196 e3 274

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Manufacturer (34)

Advanced Microelectronic Products Inc 4 Diodes Incorporated 4 Dynex Semiconductor 1 Fairchild Semiconductor Corporation 11 FCI Semiconductor 4 Freescale Semiconductor 4 General Electric Solid State 4 Harris Semiconductor 8 Infineon Technologies AG 156 International Rectifier 217 Intersil Corporation 9 Micro Electronics Corporation 4 Micro Electronics Ltd 4 Microchip Technology Inc 1 Microsemi Corporation 1 Motorola Mobility LLC 20 Motorola Semiconductor Products 20 National Semiconductor Corporation 5 New Jersey Semiconductor Products Inc 8 NXP Semiconductors 3 onsemi 2 Philips Semiconductors 1 Plessey Semiconductors Ltd 1 Rochester Electronics LLC 4 Samsung Semiconductor 5 STMicroelectronics 9 Supertex Inc 1 Texas Instruments 5 Thomson Consumer Electronics 8 TT Electronics Power and Hybrid / Semelab Limited 4 TT Electronics Resistors 4 Vishay Intertechnologies 8 Vishay Siliconix 5 Zetex / Diodes Inc 4

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1 32 NOT APPLICABLE 1 NOT SPECIFIED 3

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Number of Elements (1)

1 538

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Number of Terminals (2)

2 38 3 439

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ENHANCEMENT MODE 542

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150.0 °C 74 175.0 °C 117

Min (°C) - Max (°C)

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-55.0 °C 4

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PLASTIC/EPOXY 477

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RECTANGULAR 477

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FLANGE MOUNT 436 IN-LINE 4 SMALL OUTLINE 37

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Active 28 Contact Manufacturer 16 End Of Life 1 Obsolete 342 Transferred 162

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No 86 Yes 118

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225 11 235 9 240 1 250 3 260 14 NOT SPECIFIED 28

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Polarity/Channel Type (2)

N-CHANNEL 450 P-CHANNEL 92

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3.8 W 3 35 W 1 60 W 38 70 W 2 75 W 41 77 W 4 79 W 12 88 W 42 110 W 1

Min (W) - Max (W)

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35 W 4 40 W 1 55 W 2 63 W 4 70 W 2 75 W 24 79 W 72 83 W 1 85 W 3 88 W 6 110 W 15

Min (W) - Max (W)

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Surface Mount (2)

NO 497 YES 37

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