Parametric results for: IRF430 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

1.1 mJ 35 300.0 mJ 1

Min (mJ) - Max (mJ)

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DRAIN 38

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Configuration (2)

SINGLE 12 SINGLE WITH BUILT-IN DIODE 38

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DS Breakdown Voltage-Min (3)

20 V 10 450 V 1 500 V 31

Min (V) - Max (V)

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Drain Current-Max (ID) (1)

4.5 A 50

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Drain-source On Resistance-Max (2)

1.5 Ω 4 1.8 Ω 35

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 52

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TO-204 1 TO-204AA 28 TO-3 10

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O-MBFM-P2 39

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e0 19 e1 4

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Manufacturer (16)

Fairchild Semiconductor Corporation 1 FCI Semiconductor 1 General Electric Solid State 1 Harris Semiconductor 2 Infineon Technologies AG 12 International Rectifier 12 Intersil Corporation 2 National Semiconductor Corporation 1 New Jersey Semiconductor Products Inc 5 Rochester Electronics LLC 1 Samsung Semiconductor 1 Texas Instruments 1 Thomson Consumer Electronics 2 TT Electronics Power and Hybrid / Semelab Limited 5 TT Electronics Resistors 5 Vishay Siliconix 1

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NOT SPECIFIED 1

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Number of Elements (1)

1 50

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Number of Terminals (1)

2 39

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ENHANCEMENT MODE 52

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150.0 °C 35

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-55.0 °C 1

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METAL 39

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ROUND 39

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FLANGE MOUNT 39

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Active 17 Contact Manufacturer 2 Obsolete 25 Transferred 9

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No 10 Yes 8

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260 6 NOT SPECIFIED 19

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Polarity/Channel Type (1)

N-CHANNEL 52

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75 W 15

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75 W 13

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Surface Mount (1)

NO 47

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