Parametric results for: IRF3707ZCSTRL under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

40.0 mJ 2

4 hits Apply

DRAIN 2

4 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

4 hits Apply

Drain Current-Max (ID) (2)

42 A 1 59 A 3

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (1)

9.5 mΩ 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PSSO-G2 2

4 hits Apply

e0 1 e3 3

4 hits Apply

Manufacturer (2)

Infineon Technologies AG 1 International Rectifier 3

4 hits Apply

1 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

2 2

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

175.0 °C 4

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

SMALL OUTLINE 2

4 hits Apply

Active 1 Obsolete 2 Transferred 1

4 hits Apply

225 1 260 3

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

57 W 3

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply