Parametric results for: IRF3007L under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 2

3 hits Apply

290.0 mJ 1 946.0 mJ 2

Min (mJ) - Max (mJ)

3 hits Apply

DRAIN 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

75 V 3

3 hits Apply

Drain Current-Max (ID) (1)

62 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

12.6 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

78 pF 1

3 hits Apply

TO-262AA 3

3 hits Apply

R-PSIP-T3 3

3 hits Apply

e0 1 e3 1

3 hits Apply

Manufacturer (2)

Infineon Technologies AG 1 International Rectifier 2

3 hits Apply

1 2

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

175.0 °C 2

3 hits Apply

-55.0 °C 1

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

IN-LINE 3

3 hits Apply

Active 1 Obsolete 2

3 hits Apply

260 1 NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

120 W 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply